Datasheet > MRF6S21140HR3_10

MRF6S21140HR3_10

更新时间： 2024-02-23 12:52:38

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
14页	826K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF6S21140HR3_10 数据手册

Document Number: MRF6S21140H

Rev. 5, 2/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF6S21140HR3

MRF6S21140HSR3

Designed for W--CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN--PCS/cellular radio and WLL

applications.

•

Typical 2--carrier W--CDMA Performance: V_DD= 28 Volts, I_DQ= 1200 mA,

P_out= 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

2110--2170 MHz, 30 W AVG., 28 V

2 x W--CDMA

Power Gain — 15.5 dB

LATERAL N--CHANNEL

RF POWER MOSFETs

Drain Efficiency — 27.5%

IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth

•

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 V_DDOperation

Integrated ESD Protection

Optimized for Doherty Applications

RoHS Compliant

CASE 465B--03, STYLE 1

NI--880

MRF6S21140HR3

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C--02, STYLE 1

NI--880S

MRF6S21140HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +68

--0.5, +12

-- 65 to +150

150

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 140 W CW

Case Temperature 75°C, 30 W CW

0.35

0.38

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

MRF6S21140HR3 MRF6S21140HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...14

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与MRF6S21140HR3_10相关器件

型号	品牌	获取价格	描述	数据表
MRF6S21140HSR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21190H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21190HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21190HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S23100H	FREESCALE	获取价格	RF Power Dield Effect Transistors
MRF6S23100HR3	FREESCALE	获取价格	RF Power Dield Effect Transistors
MRF6S23100HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S23100HSR3	FREESCALE	获取价格	RF Power Dield Effect Transistors
MRF6S23100HSR3	ROCHESTER	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
MRF6S23100HXX	FREESCALE	获取价格	RF Power Dield Effect Transistors

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