Datasheet > MRF6S27015NR1_08

MRF6S27015NR1_08

更新时间： 2024-01-29 21:07:17

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
19页	634K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF6S27015NR1_08 数据手册

Document Number: MRF6S27015N

Rev. 2, 12/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S27015NR1

MRF6S27015GNR1

Designed for CDMA base station applications with frequencies from 2000 to

2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

AB and Class C amplifier applications.

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

160 mA, P_out= 3 Watts Avg., f = 2600 MHz, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14 dB

2300-2700 MHz, 3 W AVG., 28 V

SINGLE W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 22%

ACPR @ 5 MHz Offset — -45 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1265-09, STYLE 1

TO-270-2

PLASTIC

MRF6S27015NR1

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

CASE 1265A-03, STYLE 1

TO-270-2 GULL

PLASTIC

MRF6S27015GNR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

-65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 7.5 W Avg., Two-Tone

Case Temperature 79°C, 3 W CW

°C/W

2.0

2.2

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S27015NR1 MRF6S27015GNR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...19

中文翻译

下载PDF

与MRF6S27015NR1_08相关器件

型号	品牌	获取价格	描述	数据表
MRF6S27050HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27050HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27085HR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27085HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HSR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9045	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045N	FREESCALE	获取价格	RF Power Field Effect Transistors

与MRF6S27015NR1_08相关文章

共享储能电站：数据驱动与政策引领下的黄金机遇
2024-06-26

9
US1M数据手册解读：产品特性、替换型号推荐
2024-06-26

3
解析BAV99LT1G手册：参数分析、替换型号推荐
2024-06-26

3
解读BSS138PW数据手册：产品特性、电气参数及替换型号推荐
2024-06-26

5

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S27015NR1_08

MRF6S27015NR1_08 数据手册

与MRF6S27015NR1_08相关器件

与MRF6S27015NR1_08相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S27015NR1_08

MRF6S27015NR1_08 数据手册

与MRF6S27015NR1_08相关器件

与MRF6S27015NR1_08相关文章

您还可以找

您在本页遇到什么问题？