Datasheet > MRF6S9125N

MRF6S9125N

更新时间： 2024-02-05 17:59:24

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
23页	911K
描述
RF Power Field Effect Transistors

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数据手册

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MRF6S9125N 数据手册

Document Number: MRF6S9125N

Rev. 5, 8/2008

Freescale Semiconductor

Technical Data

MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device

Migration PCN12895 for more details.

MRF6S9125NR1

MRF6S9125NBR1

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large-signal, common-source amplifier

applications in 28 volt base station equipment.

865-960 MHz, 27 W AVG., 28 V

SINGLE N-CDMA, GSM EDGE

LATERAL N-CHANNEL

N-CDMA Application

• Typical Single-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ

950 mA, P_out= 27 Watt Avg., Full Frequency Band (865-960 MHz), IS-95

CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel

Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 20.2 dB

RF POWER MOSFETs

Drain Efficiency — 31%

ACPR @ 750 kHz Offset = -47.1 dBc in 30 kHz Bandwidth

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 700 mA,

P_out= 60 Watts Avg., Full Frequency Band (865-960 MHz or

921-960 MHz)

CASE 1486-03, STYLE 1

TO-270 WB-4

Power Gain — 20 dB

PLASTIC

MRF6S9125NR1

Drain Efficiency — 40%

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.8% rms

GSM Application

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 700 mA, P_out

125 Watts, Full Frequency Band (921-960 MHz)

Power Gain — 19 dB

CASE 1484-04, STYLE 1

TO-272 WB-4

Drain Efficiency — 62%

PLASTIC

MRF6S9125NBR1

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts

CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• 225°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

MRF6S9125NR1 MRF6S9125NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...23

中文翻译

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与MRF6S9125N相关器件

型号	品牌	获取价格	描述	数据表
MRF6S9125NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125NR1_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9160H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9160HR3	FREESCALE	获取价格	RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

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