Datasheet > MRF6V12500GS

MRF6V12500GS

更新时间： 2024-03-03 10:09:52

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	805K
描述
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

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MRF6V12500GS 数据手册

Document Number: MRF6V12500H

Rev. 5, 7/2016

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

MRF6V12500H

MRF6V12500HS

MRF6V12500GS

N--Channel Enhancement--Mode Lateral MOSFETs

These RF power transistors are designed for applications operating at

frequencies between 960 and 1215 MHz such as distance measuring

equipment (DME), transponders and secondary radars for air traffic control.

These devices are suitable for use in pulse applications, including Mode S

ELM.

960--1215 MHz, 500 W, 50 V

PULSE

RF POWER LDMOS TRANSISTORS



Typical Pulse Performance: V_DD= 50 Volts, I_DQ= 200 mA

(1)

Freq.

(MHz)



out

Application

Signal Type

(W)

(dB) (%)

Narrowband

Short Pulse

Pulse

500 Peak

1030

19.7 62.0

(128 sec, 10% Duty Cycle)

Narrowband

Pulse

500 Peak

1030

19.7 62.0

Mode S ELM (48  (32 sec on, 18 sec off),

Period 2.4 msec,

6.4% Long--term Duty Cycle)

NI--780H--2L

MRF6V12500H

Broadband

Pulse

500 Peak 960--1215 18.5 57.0

(128 sec, 10% Duty Cycle)

1. Minimum output power for each specified pulse condition.



Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak

Power

Features

NI--780S--2L



Characterized with Series Equivalent Large--Signal Impedance Parameters

MRF6V12500HS

Internally Matched for Ease of Use

Qualified up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--780GS--2L

MRF6V12500GS

Gate

Drain

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

MRF6V12500H MRF6V12500HS MRF6V12500GS

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...18

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与MRF6V12500GS相关器件

型号	品牌	获取价格	描述	数据表
MRF6V12500GSR5	NXP	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
MRF6V12500H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6V12500H	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
MRF6V12500HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6V12500HR3_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12500HR5	FREESCALE	获取价格	RF Power Field Effect Transis
MRF6V12500HR5	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
MRF6V12500HS	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
MRF6V12500HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6V12500HSR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN