Datasheet > MRF6S9130HR3

MRF6S9130HR3

更新时间： 2024-09-25 03:06:43

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描述
RF Power Field Effect Transistors

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MRF6S9130HR3 数据手册

Document Number: MRF6S9130H

Rev. 4, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA, GSM and GSM EDGE base station applications

with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

applications.

MRF6S9130HR3

MRF6S9130HSR3

• Typical Single-Carrier N-CDMA Performance @ 880 MHz: V_DD= 28 Volts,

I_DQ= 950 mA, P_out= 27 Watts Avg., Full Frequency Band, IS-95 CDMA

(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 19.2 dB

880 MHz, 27 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 30.5%

ACPR @ 750 kHz Offset — -48.1 dBc in 30 kHz Bandwidth

GSM Application

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 950 mA, P_out

130 Watts, Full Frequency Band (921-960 MHz)

Power Gain — 18 dB

Drain Efficiency — 63%

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 950 mA,

_out= 56 Watts Avg., Full Frequency Band (921-960 MHz)

Power Gain — 18.5 dB

Drain Efficiency — 44%

CASE 465-06, STYLE 1

NI-780

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -75 dBc

EVM — 1.5% rms

MRF6S9130HR3

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 465A-06, STYLE 1

NI-780S

MRF6S9130HSR3

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +68

-0.5, +12

Total Device Dissipation @ T = 25°C

Derate above 25°C

389

2.2

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

MRF6S9130HR3 MRF6S9130HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF6S9130HR3相关器件

型号	品牌	获取价格	描述	数据表
MRF6S9130HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9160H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9160HR3	FREESCALE	获取价格	RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF6S9160HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9160HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF6V10010N	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
MRF6V10010NR4	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6V10250HSR3	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6V12250H	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V

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