Datasheet > MRF6V10010N

MRF6V10010N

更新时间： 2024-03-03 10:10:57

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
10页	678K
描述
Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V

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MRF6V10010N 数据手册

Document Number: MRF6V10010N

Rev. 3, 7/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

RF Power transistor designed for applications operating at frequencies

between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

use in pulsed applications.

MRF6V10010NR4

•

Typical Pulsed Performance: V_DD= 50 Volts, I_DQ= 10 mA, P_out= 10 Watts

Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%

Power Gain — 25 dB

1090 MHz, 10 W, 50 V

PULSED

LATERAL N--CHANNEL

RF POWER MOSFET

Drain Efficiency — 69%

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•

RoHS Compliant

In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.

CASE 466--03, STYLE 1

PLD--1.5

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +100

--6.0, +10

-- 65 to +150

150

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

200

°C

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 10 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle

1.6

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6V10010NR4

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...10

中文翻译

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与MRF6V10010N相关器件

型号	品牌	获取价格	描述	数据表
MRF6V10010NR4	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6V10250HSR3	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6V12250H	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
MRF6V12250HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12250HR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465-06, NI-780, 2 PIN
MRF6V12250HR5	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, NI-780, CASE 465
MRF6V12250HS	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
MRF6V12250HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12250HSR5	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
MRF6V12500GS	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

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