Datasheet > MRF6V10250HSR3

MRF6V10250HSR3

更新时间： 2024-09-25 04:14:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
10页	363K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF6V10250HSR3 数据手册

Document Number: MRF6V10250HS

Rev. 0, 2/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

RF Power transistor designed for applications operating at frequencies

between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

use in pulsed applications.

MRF6V10250HSR3

• Typical Pulsed Performance: V_DD= 50 Volts, I_DQ= 250 mA,

_out= 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec,

Duty Cycle = 10%

1090 MHz, 250 W, 50 V

PULSED

Power Gain — 21 dB

Drain Efficiency — 60%

LATERAL N-CHANNEL

RF POWER MOSFET

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak

Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 50 V_DDOperation

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +100

-6.0, +10

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

DSS

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

200

°C

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 250 W Pulsed, 100 μsec Pulse Width, 10% Duty Cycle

0.10

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...10

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与MRF6V10250HSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF6V12250H	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
MRF6V12250HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12250HR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465-06, NI-780, 2 PIN
MRF6V12250HR5	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, NI-780, CASE 465
MRF6V12250HS	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
MRF6V12250HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12250HSR5	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
MRF6V12500GS	NXP	获取价格	Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
MRF6V12500GSR5	NXP	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
MRF6V12500H	FREESCALE	获取价格	RF Power Field Effect Transistors

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