Datasheet > MRF6S9045NR1_08

MRF6S9045NR1_08

更新时间： 2024-09-24 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
18页	705K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF6S9045NR1_08 数据手册

Document Number: MRF6S9045N

Rev. 4, 8/2008

Freescale Semiconductor

Technical Data

MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration

PCN12895 for more details. MRF6S9045NBR1 no longer manufactured.

RF Power Field Effect Transistors

MRF6S9045NR1

MRF6S9045NBR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large-signal, common-source amplifier

applications in 28 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, V_DD= 28 Volts,

_DQ= 350 mA, P_out= 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

880 MHz, 10 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

Power Gain — 22.7 dB

Drain Efficiency — 32%

ACPR @ 750 kHz Offset — -47 dBc in 30 kHz Bandwidth

BROADBAND RF POWER MOSFETs

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 350 mA,

P_out= 16 Watts Avg., Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5% rms

CASE 1265-09, STYLE 1

TO-270-2

GSM Application

PLASTIC

MRF6S9045NR1

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 350 mA, P_out= 45 Watts,

Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 68%

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• 225°C Capable Plastic Package

CASE 1337-04, STYLE 1

TO-272-2

PLASTIC

MRF6S9045NBR1

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

- 0.5, +68

- 0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

MRF6S9045NR1 MRF6S9045NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

中文翻译

下载PDF

与MRF6S9045NR1_08相关器件

型号	品牌	获取价格	描述	数据表
MRF6S9060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060NBR1	FAIRCHILD	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9060NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060NR1	FAIRCHILD	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9125	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors

与MRF6S9045NR1_08相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

5
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

10
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S9045NR1_08

MRF6S9045NR1_08 数据手册

与MRF6S9045NR1_08相关器件

与MRF6S9045NR1_08相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S9045NR1_08

MRF6S9045NR1_08 数据手册

与MRF6S9045NR1_08相关器件

与MRF6S9045NR1_08相关文章

您还可以找

您在本页遇到什么问题？