Datasheet > MRF6S9125MBR1

MRF6S9125MBR1

更新时间： 2024-09-24 10:47:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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描述
RF Power Field Effect Transistors

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MRF6S9125MBR1 数据手册

Document Number: MRF6S9125

Rev. 1, 7/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large-signal, common-source amplifier

applications in 28 volt base station equipment.

MRF6S9125NR1

MRF6S9125NBR1

MRF6S9125MR1

MRF6S9125MBR1

N-CDMA Application

• Typical Single-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ

950 mA, P_out= 27 Watt Avg., Full Frequency Band (865-895 MHz), IS-95

CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel

Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 20.2 dB

Drain Efficiency — 31%

ACPR @ 750 kHz Offset = -47.1 dBc @ 30 kHz Bandwidth

880 MHz, 27 W AVG., 28 V

SINGLE N-CDMA

GSM EDGE Application

LATERAL N-CHANNEL

RF POWER MOSFETs

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 700 mA,

_out= 60 Watts Avg., Full Frequency Band (865-895 MHz or

921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 40% (Typ)

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5% rms

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6S9125NR1(MR1)

GSM Application

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 700 mA, P_out

125 Watts, Full Frequency Band (921-960 MHz)

Power Gain — 19 dB

Drain Efficiency — 62%

• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,

@ f = 880 MHz

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1484-02, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S9125NBR1(MBR1)

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

398

2.3

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

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与MRF6S9125MBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF6S9125MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125NR1_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9125NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9130HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors

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