是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | TO-272 | 包装说明: | FLANGE MOUNT, R-PDFM-F2 |
针数: | 2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.06 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 68 V |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JEDEC-95代码: | TO-272 | JESD-30 代码: | R-PDFM-F2 |
JESD-609代码: | e0 | 湿度敏感等级: | 3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 227 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF6S9060MR1 | FREESCALE |
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RF Power Field Effect Transistors |
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MRF6S9060N | FREESCALE |
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RF Power Field Effect Transistors |
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MRF6S9060NBR1 | FAIRCHILD |
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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MRF6S9060NBR1 | FREESCALE |
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RF Power Field Effect Transistors |
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MRF6S9060NR1 | FREESCALE |
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RF Power Field Effect Transistors |
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MRF6S9060NR1 | FAIRCHILD |
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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MRF6S9125 | FREESCALE |
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RF Power Field Effect Transistors |
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MRF6S9125MBR1 | FREESCALE |
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RF Power Field Effect Transistors |
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MRF6S9125MR1 | FREESCALE |
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RF Power Field Effect Transistors |
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MRF6S9125N | FREESCALE |
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RF Power Field Effect Transistors |
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