Document Number: MRF6S9045
Rev. 1, 6/2005
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9045NR1
MRF6S9045NBR1
MRF6S9045MR1
MRF6S9045MBR1
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,
I
DQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — -47 dBc @ 30 kHz Bandwidth
880 MHz, 10 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,
BROADBAND RF POWER MOSFETs
P
out = 16 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,
Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF6S9045NR1(MR1)
Drain Efficiency — 68%
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF6S9045NBR1(MBR1)
13 inch Reel.
• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
- 0.5, +68
- 0.5, +12
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
175
1.0
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
1