Datasheet > MRF6S9045N

MRF6S9045N

更新时间： 2024-09-24 03:06:43

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	629K
描述
RF Power Field Effect Transistors

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数据手册

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MRF6S9045N 数据手册

Document Number: MRF6S9045N

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large-signal, common-source amplifier

applications in 28 volt base station equipment.

MRF6S9045NR1

MRF6S9045NBR1

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, V_DD= 28 Volts,

_DQ= 350 mA, P_out= 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 22.7 dB

Drain Efficiency — 32%

ACPR @ 750 kHz Offset — -47 dBc in 30 kHz Bandwidth

880 MHz, 10 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 350 mA,

BROADBAND RF POWER MOSFETs

_out= 16 Watts Avg., Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5% rms

GSM Application

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 350 mA, P_out= 45 Watts,

Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

CASE 1265-08, STYLE 1

TO-270-2

PLASTIC

MRF6S9045NR1

Drain Efficiency — 68%

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

CASE 1337-03, STYLE 1

TO-272-2

• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

PLASTIC

MRF6S9045NBR1

• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +68

- 0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

175

1.0

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

MRF6S9045NR1 MRF6S9045NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

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与MRF6S9045N相关器件

型号	品牌	获取价格	描述	数据表
MRF6S9045NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060NBR1	FAIRCHILD	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9060NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors

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