Datasheet > MRF6S27085HR3_08

MRF6S27085HR3_08

更新时间： 2024-01-09 00:10:30

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
11页	397K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S27085HR3_08 数据手册

Document Number: MRF6S27085H

Rev. 3, 12/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2600 to

2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C for WLL applications.

MRF6S27085HR3

MRF6S27085HSR3

• Typical Single-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ

900 mA, P_out= 20 Watts Avg., f = 2660 MHz, IS-95 CDMA (Pilot, Sync,

Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

2600-2700 MHz, 20 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 23.5%

ACPR @ 885 kHz Offset — -48 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 465-06, STYLE 1

NI-780

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

MRF6S27085HR3

Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF6S27085HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 85 W CW

Case Temperature 76°C, 20 W CW

°C/W

0.50

0.56

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S27085HR3 MRF6S27085HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

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与MRF6S27085HR3_08相关器件

型号	品牌	获取价格	描述	数据表
MRF6S27085HSR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9045	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9060MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors

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