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MRF6S21190HR3 PDF预览

MRF6S21190HR3

更新时间： 2024-02-27 14:16:25
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
11页 418K
描述
RF Power Field Effect Transistors

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MRF6S21190HR3 技术参数

生命周期：Active包装说明：ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN
针数：2Reach Compliance Code：unknown
风险等级：5.82外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：68 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：COMMERCIAL表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON

MRF6S21190HR3 数据手册

 浏览型号MRF6S21190HR3的Datasheet PDF文件第2页浏览型号MRF6S21190HR3的Datasheet PDF文件第3页浏览型号MRF6S21190HR3的Datasheet PDF文件第4页浏览型号MRF6S21190HR3的Datasheet PDF文件第5页浏览型号MRF6S21190HR3的Datasheet PDF文件第6页浏览型号MRF6S21190HR3的Datasheet PDF文件第7页 
Document Number: MRF6S21190H  
Rev. 1, 3/2008  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF6S21190HR3  
MRF6S21190HSR3  
Designed for W-CDMA base station applications with frequencies from 2110  
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-  
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL  
applications.  
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ  
=
2110-2170 MHz, 54 W AVG., 28 V  
SINGLE W-CDMA  
1600 mA, Pout = 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1,  
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal  
PAR = 7.5 dB @ 0.01% Probability on CCDF.  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Power Gain — 16 dB  
Drain Efficiency — 29%  
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF  
ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz Channel Bandwidth  
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW  
Output Power  
Features  
• 100% PAR Tested for Guaranteed Output Power Capability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Internally Matched for Ease of Use  
• Integrated ESD Protection  
• Designed for Digital Predistortion Error Correction Systems  
CASE 465B-03, STYLE 1  
NI-880  
MRF6S21190HR3  
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth  
Applications  
• RoHS Compliant  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465C-02, STYLE 1  
NI-880S  
MRF6S21190HSR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +68  
-0.5, +12  
32, +0  
Unit  
Vdc  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
GS  
DD  
Operating Voltage  
V
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
- 65 to +150  
150  
T
°C  
C
T
200  
°C  
J
CW Operation @ T = 25°C  
Derate above 25°C  
CW  
175  
1
W
W/°C  
C
Table 2. Thermal Characteristics  
(1,2)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 85°C, 120 W CW  
Case Temperature 83°C, 56 W CW  
R
θ
JC  
°C/W  
0.29  
0.30  
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access  
MTTF calculators by product.  
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  
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