Datasheet > MRF6S23140H_V2

MRF6S23140H_V2

更新时间： 2024-09-24 12:24:51

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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RF Power Field Effect Transistors

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MRF6S23140H_V2 数据手册

Document Number: MRF6S23140H

Rev. 2, 12/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF6S23140HR3

MRF6S23140HSR3

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2300 to

2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C WLL applications.

2300-2400 MHz, 28 W AVG., 28 V

2 x W-CDMA

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1300 mA,

_out= 28 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,

LATERAL N-CHANNEL

RF POWER MOSFETs

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 15.2 dB

Drain Efficiency — 25%

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 465B-03, STYLE 1

NI-880

MRF6S23140HR3

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF6S23140HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 82°C, 140 W CW

Case Temperature 75°C, 28 W CW

°C/W

0.29

0.33

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

1. Continuous use at maximum temperature will affect MTTF.

2 (Minimum)

A (Minimum)

IV (Minimum)

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S23140HR3 MRF6S23140HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF6S23140H_V2相关器件

型号	品牌	获取价格	描述	数据表
MRF6S23140HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S24140H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S24140HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S24140HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S24140HR5	NXP	获取价格	MRF6S24140HR5
MRF6S24140HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S24140HSR5	NXP	获取价格	MRF6S24140HSR5
MRF6S27015GNR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27015NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27015NR1_07	FREESCALE	获取价格	RF Power Field Effect Transistors

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