Document Number: MRF6S27015N
Rev. 0, 8/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27015NR1
MRF6S27015GNR1
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ
=
2300-2700 MHz, 3 W AVG., 28 V
SINGLE W-CDMA
160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
LATERAL N-CHANNEL
RF POWER MOSFETs
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — -45 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF6S27015NR1
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
MRF6S27015GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
-65 to +175
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
°C
Table 2. Thermal Characteristics
Characteristic
(1,2)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two-Tone
Case Temperature 79°C, 3 W CW
R
°C/W
θ
JC
2.0
2.2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
1