Datasheet > MRF6S23100HXX

MRF6S23100HXX

更新时间： 2022-11-24 21:45:07

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管射频
页数	文件大小	规格书
12页	415K
描述
RF Power Dield Effect Transistors

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中文翻译

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数据手册

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MRF6S23100HXX 数据手册

Document Number: MRF6S23100H

Rev. 0, 8/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for 802.16 WiBro and dual mode applications with frequencies

from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion

systems.

MRF6S23100HR3

MRF6S23100HSR3

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1000 mA,

_out= 20 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 15.4 dB

2300-2400 MHz, 20 W AVG., 28 V

2 x W-CDMA

Drain Efficiency — 23.5%

IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -40.5 dBc @ 3.84 MHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

CASE 465-06, STYLE 1

NI-780

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

MRF6S23100HR3

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• Pb-Free and RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF6S23100HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

330

1.9

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

200

°C

stg

100

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 75°C, 20 W CW

°C/W

0.53

0.59

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6S23100HR3 MRF6S23100HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF6S23100HXX相关器件

型号	品牌	获取价格	描述	数据表
MRF6S23140H_V2	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S23140HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S24140H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S24140HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S24140HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S24140HR5	NXP	获取价格	MRF6S24140HR5
MRF6S24140HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S24140HSR5	NXP	获取价格	MRF6S24140HSR5
MRF6S27015GNR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27015NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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