Datasheet > MRF6S27015GNR1

MRF6S27015GNR1

更新时间： 2024-09-24 04:14:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频光电二极管放大器
页数	文件大小	规格书
16页	598K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF6S27015GNR1 数据手册

Document Number: MRF6S27015N

Rev. 0, 8/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S27015NR1

MRF6S27015GNR1

Designed for CDMA base station applications with frequencies from 2000 to

2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

AB and Class C amplifier applications.

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

2300-2700 MHz, 3 W AVG., 28 V

SINGLE W-CDMA

160 mA, P_out= 3 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14 dB

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 22%

ACPR @ 5 MHz Offset — -45 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1265-08, STYLE 1

TO-270-2

PLASTIC

MRF6S27015NR1

• 200°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

CASE 1265A-02, STYLE 1

TO-270-2 GULL

PLASTIC

MRF6S27015GNR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

-65 to +175

200

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

DSS

Storage Temperature Range

Operating Junction Temperature

stg

°C

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 7.5 W Avg., Two-Tone

Case Temperature 79°C, 3 W CW

°C/W

2.0

2.2

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

1A (Minimum)

A (Minimum)

IV (Minimum)

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S27015NR1 MRF6S27015GNR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

下载PDF

与MRF6S27015GNR1相关器件

型号	品牌	获取价格	描述	数据表
MRF6S27015NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27015NR1_07	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27015NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27050HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27050HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27085HR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27085HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HSR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9045	FREESCALE	获取价格	RF Power Field Effect Transistors

与MRF6S27015GNR1相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

5
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

10
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S27015GNR1

MRF6S27015GNR1 数据手册

与MRF6S27015GNR1相关器件

与MRF6S27015GNR1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S27015GNR1

MRF6S27015GNR1 数据手册

与MRF6S27015GNR1相关器件

与MRF6S27015GNR1相关文章

您还可以找

您在本页遇到什么问题？