Document Number: MRF6S24140H
Rev. 2, 2/2009
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for large-signal output applications at 2450 MHz.
Devices are suitable for use in industrial, medical and scientific applications.
MRF6S24140HR3
MRF6S24140HSR3
• Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA,
Pout = 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
2450 MHz, 140 W, 28 V
CW
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
LATERAL N-CHANNEL
RF POWER MOSFETs
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465B-03, STYLE 1
NI-880
MRF6S24140HR3
CASE 465C-02, STYLE 1
NI-880S
MRF6S24140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
V
DSS
V
GS
T
stg
T
°C
C
(1,2)
Operating Junction Temperature
T
225
°C
J
Table 2. Thermal Characteristics
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 82°C, 140 W CW
Case Temperature 75°C, 28 W CW
R
θ
JC
°C/W
0.29
0.33
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2009. All rights reserved.
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
1