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MRF6S24140HR5 PDF预览

MRF6S24140HR5

更新时间: 2024-01-28 08:12:05
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
9页 427K
描述
MRF6S24140HR5

MRF6S24140HR5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Base Number Matches:1

MRF6S24140HR5 数据手册

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Document Number: MRF6S24140H  
Rev. 2, 2/2009  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
Designed primarily for large-signal output applications at 2450 MHz.  
Devices are suitable for use in industrial, medical and scientific applications.  
MRF6S24140HR3  
MRF6S24140HSR3  
Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA,  
Pout = 140 Watts  
Power Gain — 13.2 dB  
Drain Efficiency — 45%  
2450 MHz, 140 W, 28 V  
CW  
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW  
Output Power  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Features  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
RoHS Compliant  
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465B-03, STYLE 1  
NI-880  
MRF6S24140HR3  
CASE 465C-02, STYLE 1  
NI-880S  
MRF6S24140HSR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +68  
-0.5, +12  
- 65 to +150  
150  
Unit  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
Storage Temperature Range  
Case Operating Temperature  
V
DSS  
V
GS  
T
stg  
T
°C  
C
(1,2)  
Operating Junction Temperature  
T
225  
°C  
J
Table 2. Thermal Characteristics  
Characteristic  
(2,3)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 82°C, 140 W CW  
Case Temperature 75°C, 28 W CW  
R
θ
JC  
°C/W  
0.29  
0.33  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access  
MTTF calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2007-2009. All rights reserved.  

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