5秒后页面跳转
捷配首页

Datasheet > MRF6S21140HSR3
MRF6S21140HSR3 PDF预览

MRF6S21140HSR3

更新时间： 2024-02-02 21:01:46
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管放大器
页数 文件大小 规格书
12页 464K
描述
N-Channel Enhancement-Mode Lateral MOSFETs

阅读下载

中文翻译

获取价格

MRF6S21140HSR3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.69外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：68 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-CDFP-F2湿度敏感等级：NOT SPECIFIED
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLATPACK
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：COMMERCIAL表面贴装：YES
端子面层：NOT SPECIFIED端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

MRF6S21140HSR3 数据手册

 浏览型号MRF6S21140HSR3的Datasheet PDF文件第2页浏览型号MRF6S21140HSR3的Datasheet PDF文件第3页浏览型号MRF6S21140HSR3的Datasheet PDF文件第4页浏览型号MRF6S21140HSR3的Datasheet PDF文件第5页浏览型号MRF6S21140HSR3的Datasheet PDF文件第6页浏览型号MRF6S21140HSR3的Datasheet PDF文件第7页 
MRF6S21140H  
Rev. 2, 1/2005  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF6S21140HR3  
MRF6S21140HSR3  
Designed for W-CDMA base station applications with frequencies from 2110  
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-  
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL  
applications.  
• Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ  
=
1200 mA, Pout = 30 Watts Avg., Full Frequency Band, Channel  
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.  
Power Gain — 15.5 dB  
2170 MHz, 30 W AVG., 28 V  
2 x W-CDMA  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Drain Efficiency — 27.5%  
IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth  
ACPR @ 5 MHz Offset — -41 dBc @ 3.84 MHz Channel Bandwidth  
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW  
Output Power  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Internally Matched, Controlled Q, for Ease of Use  
• Qualified Up to a Maximum of 32 VDD Operation  
• Integrated ESD Protection  
CASE 465B-03, STYLE 1  
NI-880  
• Lower Thermal Resistance Package  
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth  
MRF6S21140HR3  
Applications  
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465C-02, STYLE 1  
NI-880S  
MRF6S21140HSR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
-0.5, +68  
-0.5, +12  
DSS  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
500  
2.9  
W
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
CW Operation  
T
- 65 to +150  
200  
°C  
°C  
W
stg  
T
J
CW  
140  
Table 2. Thermal Characteristics  
(1,2)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 80°C, 140 W CW  
Case Temperature 75°C, 30 W CW  
R
θ
JC  
°C/W  
0.35  
0.38  
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access  
the MTTF calculators by product.  
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select  
Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
Freescale Semiconductor, Inc., 2005. All rights reserved.  
 
1234567...12

中文翻译

下载PDF

与MRF6S21140HSR3相关器件

型号 品牌 获取价格 描述 数据表
MRF6S21190H FREESCALE

获取价格

 		RF Power Field Effect Transistors
MRF6S21190HR3 FREESCALE

获取价格

 		RF Power Field Effect Transistors
MRF6S21190HSR3 FREESCALE

获取价格

 		RF Power Field Effect Transistors
MRF6S23100H FREESCALE

获取价格

 		RF Power Dield Effect Transistors
MRF6S23100HR3 FREESCALE

获取价格

 		RF Power Dield Effect Transistors
MRF6S23100HR3_06 FREESCALE

获取价格

 		RF Power Field Effect Transistors
MRF6S23100HSR3 FREESCALE

获取价格

 		RF Power Dield Effect Transistors
MRF6S23100HSR3 ROCHESTER

获取价格

 		S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
MRF6S23100HXX FREESCALE

获取价格

 		RF Power Dield Effect Transistors
MRF6S23140H_V2 FREESCALE

获取价格

 		RF Power Field Effect Transistors

与MRF6S21140HSR3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证