Datasheet > MRF6S21100NBR1

MRF6S21100NBR1

更新时间： 2024-11-01 03:46:59

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描述
RF Power Field Effect Transistors

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MRF6S21100NBR1 数据手册

Document Number: MRF6S21100N

Rev. 2, 1/2007

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio, WLL and

TD-SCDMA applications.

MRF6S21100NR1

MRF6S21100NBR1

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1050 mA,

_out= 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14.5 dB

2110-2170 MHz, 23 W AVG., 28 V

2 x W-CDMA

Drain Efficiency — 25.5%

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth

ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1486-03, STYLE 1

TO-270 WB-4

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

PLASTIC

MRF6S21100NR1

Applications

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S21100NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +175

200

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

DSS

Storage Temperature Range

Operating Junction Temperature

stg

°C

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 73°C, 23 W CW

°C/W

0.57

0.66

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S21100NR1 MRF6S21100NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

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与MRF6S21100NBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF6S21100NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21100NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3_07	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6S21140HSR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21190H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21190HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21190HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S23100H	FREESCALE	获取价格	RF Power Dield Effect Transistors

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