Datasheet > MRF281SR1_06

MRF281SR1_06

更新时间： 2024-02-29 08:23:43

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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RF Power Field Effect Transistors

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数据手册

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MRF281SR1_06 数据手册

Document Number: MRF281

Rev. 5, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF281SR1

MRF281ZR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for digital and analog cellular PCN and PCS base station

applications with frequencies from 1000 to 2500 MHz. Characterized for

operation Class A and Class AB at 26 volts in commercial and industrial

applications.

2000 MHz, 4 W, 26 V

LATERAL N-CHANNEL

BROADBAND

• Specified Two-Tone Performance @ 1930 and 2000 MHz, 26 Volts

Output Power — 4 Watts PEP

Power Gain — 11 dB

RF POWER MOSFETs

Efficiency — 30%

Intermodulation Distortion — -29 dBc

• Capable of Handling 10:1 VSWR, @ 26 Vdc,

2000 MHz, 4 Watts CW Output Power

Features

• Excellent Thermal Stability

CASE 458B-03, STYLE 1

NI-200S

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• S-Parameter Characterization at High Bias Levels

• RoHS Compliant

MRF281SR1

• Available in Tape and Reel. R1 Suffix = 500 Units per

12 mm, 7 inch Reel.

CASE 458C-03, STYLE 1

NI-200Z

MRF281ZR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.115

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

5.74

°C/W

Table 3. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

(V = 0, I = 10 μAdc)

—

Vdc

μAdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 28 Vdc, V = 0)

DSS

Gate-Source Leakage Current

(V = 20 Vdc, V = 0)

GSS

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF281SR1 MRF281ZR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7 8

中文翻译

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与MRF281SR1_06相关器件

型号	品牌	获取价格	描述	数据表
MRF281ZR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF281ZR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF282	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF282S	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282SR1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-200S, CASE 458B-03, 2 PIN
MRF282SR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF282Z	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282ZR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF282ZR1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-200Z, CASE 458C-03, 2 PIN

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