MRF282Z

更新时间： 2024-01-25 04:28:09

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管放大器
页数	文件大小	规格书
11页	146K
描述
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

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中文翻译

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技术参数
数据手册
替代型号

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MRF282Z 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	子类别：	FET General Purpose Power
Base Number Matches：	1

MRF282Z 数据手册

Order this document

by MRF282/D

SEMICONDUCTOR TECHNICAL DATA

The RF Sub–Micron MOSFET Line

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for class A and class AB PCN and PCS base station applications at

frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier

amplifier applications.

10 W, 2000 MHz, 26 V

LATERAL N–CHANNEL

BROADBAND

•

Specified Two–Tone Performance @ 2000 MHz, 26 Volts

Output Power = 10 Watts (PEP)

Power Gain = 11 dB

RF POWER MOSFETs

Efficiency = 30%

Intermodulation Distortion = –30 dBc

•

Specified Single–Tone Performance @ 2000 MHz, 26 Volts

Output Power = 10 Watts (CW)

Power Gain = 11 dB

Efficiency = 40%

Characterized with Series Equivalent Large–Signal

Impedance Parameters

CASE 458–03, STYLE 1

(MRF282S)

•

S–Parameter Characterization at High Bias Levels

Excellent Thermal Stability

Capable of Handling 10:1 VSWR, @ 26 Vdc,

2000 MHz, 10 Watts (CW) Output Power

CASE 458A–01, STYLE 1

(MRF282Z)

•

Gold Metallization for Improved Reliability

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

±20

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.34

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

2.9

°C/W

θJC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(V = 0, I = 10 µAdc)

—

Vdc

µAdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 28 Vdc, V = 0)

1.0

DSS

GSS

Gate–Source Leakage Current

(V = 20 Vdc, V = 0)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRF282S MRF282Z

12 3 4 5 6 7...11

中文翻译

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MRF282Z 替代型号

型号	品牌	替代类型	描述	数据表
MRF282S	MOTOROLA	功能相似	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

与MRF282Z相关器件

型号	品牌	获取价格	描述	数据表
MRF282ZR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF282ZR1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-200Z, CASE 458C-03, 2 PIN
MRF284	MOTOROLA	获取价格	RF Power Field-Effect Transistors
MRF284	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF284	NJSEMI	获取价格	Trans RF MOSFET N-CH 65V 3-Pin NI-360
MRF284LR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF284LR1	ROCHESTER	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
MRF284LR1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 2 PIN
MRF284LSR1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360S, CASE 360C-05, 2 PIN
MRF284LSR1	FREESCALE	获取价格	RF Power Field Effect Transistors

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