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MRF284

更新时间： 2024-02-26 09:03:19
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
12页 376K
描述
RF Power Field Effect Transistors

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MRF284 技术参数

生命周期：Obsolete包装说明：FLATPACK, R-CDFP-F2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.3外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-CDFP-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLATPACK
极性/信道类型：N-CHANNEL认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON

MRF284 数据手册

 浏览型号MRF284的Datasheet PDF文件第2页浏览型号MRF284的Datasheet PDF文件第3页浏览型号MRF284的Datasheet PDF文件第4页浏览型号MRF284的Datasheet PDF文件第5页浏览型号MRF284的Datasheet PDF文件第6页浏览型号MRF284的Datasheet PDF文件第7页 
Document Number: MRF284  
Rev. 17, 5/2006  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
MRF284LR1  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF284LSR1  
Designed for PCN and PCS base station applications with frequencies from  
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier  
applications. To be used in Class A and Class AB for PCN-PCS/cellular radio  
and wireless local loop.  
2000 MHz, 30 W, 26 V  
LATERAL N-CHANNEL  
BROADBAND  
• Specified Two-Tone Performance @ 2000 MHz, 26 Volts  
Output Power = 30 Watts PEP  
Power Gain = 9 dB  
RF POWER MOSFETs  
Efficiency = 30%  
Intermodulation Distortion = -29 dBc  
• Typical Single-Tone Performance at 2000 MHz, 26 Volts  
Output Power = 30 Watts CW  
Power Gain = 9.5 dB  
Efficiency = 45%  
CASE 360B-05, STYLE 1  
NI-360  
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW  
Output Power  
MRF284LR1  
Features  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.  
• RoHS Compliant  
CASE 360C-05, STYLE 1  
NI-360S  
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.  
MRF284LSR1  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +65  
20  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
87.5  
0.5  
W
W/°C  
C
D
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
- 65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
2.0  
°C/W  
Table 3. Electrical Characteristics (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
(V = 0, I = 10 μAdc)  
V
65  
—
—
—
—
—
—
1.0  
10  
Vdc  
(BR)DSS  
GS  
D
Zero Gate Voltage Drain Current  
(V = 20 Vdc, V = 0)  
I
μAdc  
DSS  
DS  
GS  
Gate-Source Leakage Current  
(V = 20 Vdc, V = 0)  
I
μAdc  
GSS  
GS  
DS  
(continued)  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  
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