Datasheet > MRF3010

MRF3010

更新时间： 2024-01-28 00:25:20

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		射频
页数	文件大小	规格书
8页	110K
描述
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

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中文翻译

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技术参数
数据手册

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MRF3010 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	子类别：	FET General Purpose Power

MRF3010 数据手册

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by MRF3010/D

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

N–Channel Enhancement–Mode Lateral

MOSFET

10 W, 1.6 GHz, 28 V

LATERAL N–CHANNEL

BROADBAND

Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

CW amplifier applications.

RF POWER MOSFET

•

Guaranteed Performance @ 1.6 GHz, 28 Volts

Output Power = 10 Watts

Minimum Gain = 9.5 dB @ 10 Watts

Minimum Efficiency = 45% @ 10 Watts

•

High Gain, Rugged Device

Bottom Side Source Eliminates DC Isolators,

Reducing Common Mode Inductances

•

Broadband Performance of This Device Makes It

Ideal for Applications from 800 to 1700 MHz,

Common–Source Class AB Operation.

CASE 360B–01, STYLE 1

Typical Performance at Class A Operation:

= 2 Watts, V

= 28 Volts, I

= 1 A,

out

Gain = 12.5 dB, IMD = –32 dB

•

Characterized with Small–Signal S–Parameters from 500 to 2500 MHz

Capable of Handling 30:1 VSWR, @ 28 Vdc

Circuit Board Available Upon Request by Contacting RF Tactical Marketing

in Phoenix, AZ

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

°C

Drain–Source Voltage

DSS

Gate–Source Voltage

±20

Storage Temperature Range

Operating Junction Temperature

stg

– 65 to +150

200

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(V = 0, I = 1 µA)

–

Vdc

µAdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 28 V, V = 0)

DSS

Gate–Source Leakage Current

(V = 20 V, V = 0)

–

GSS

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1998

MRF3010

12 3 4 5 6 7 8

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