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MRF316 PDF预览

MRF316

更新时间: 2024-11-20 10:47:31
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 19K
描述
NPN SILICON RF POWER TRANSISTOR

MRF316 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CXFM-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.13
Is Samacsys:N外壳连接:EMITTER
最大集电极电流 (IC):20 A基于收集器的最大容量:250 pF
集电极-发射极最大电压:35 V配置:Single
最小直流电流增益 (hFE):10最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CXFM-F6端子数量:6
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):220 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

MRF316 数据手册

  
MRF316  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The MRF316 is Designed for Class C  
Power Amplifier Applications up to 200  
MHz.  
PACKAGE STYLE .500 6L FLG  
A
C
C
E
E
2x ØN  
FULL R  
FEATURES:  
D
PG = 10 dB min. at 80 W/ 150 MHz  
Withstands 30:1 Load VSWR  
Omnigold™ Metalization System  
E
E
B
B
E
.725/18,42  
F
G
M
K
H
I
L
MAXIMUM RATINGS  
J
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
20 A  
65 V  
IC  
.150 / 3.43  
.160 / 4.06  
A
B
C
D
E
F
G
H
I
.045 / 1.14  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
.210 / 5.33  
.835 / 21.21  
.200 / 5.08  
.490 / 12.45  
.003 / 0.08  
.220 / 5.59  
.865 / 21.97  
.210 / 5.33  
.510 / 12.95  
.007 / 0.18  
36 V  
4.0 V  
.125 / 3.18  
.725 / 18.42  
270 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
0.65 OC/W  
.970 / 24.64  
.090 / 2.29  
.150 / 3.81  
.980 / 24.89  
.105 / 2.67  
.170 / 4.32  
.285 / 7.24  
.135 / 3.43  
J
K
L
M
N
.120 / 3.05  
TSTG  
θJC  
ORDER CODE: ASI10771  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
IC = 100 mA  
MINIMUM TYPICAL MAXIMUM UNITS  
65  
65  
35  
4.0  
V
IC = 100 mA  
IC = 100 mA  
IE = 10 mA  
VCE = 30 V  
VCE = 5.0 V  
BVCES  
BVCEO  
BVEBO  
ICES  
V
V
15  
mA  
---  
IC = 5.0 A  
20  
200  
hFE  
VCB = 28 V  
f = 1.0 MHz  
250  
COB  
pF  
10.0  
55  
13.0  
60  
PG  
ηC  
dB  
%
VCE = 28 V  
POUT = 80 W  
f = 175 MHz  
Ψ
30:1 minimum without degation in output power  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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