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MRF314 PDF预览

MRF314

更新时间: 2024-02-11 22:04:10
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

MRF314 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.61Is Samacsys:N
其他特性:HIGH RELIABILITY最大集电极电流 (IC):3.4 A
基于收集器的最大容量:40 pF集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):82 W
最小功率增益 (Gp):10 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

MRF314 数据手册

  
MRF314  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The MRF314 is Designed for Class C  
Power Amplifier Applications up to 200  
MHz.  
PACKAGE STYLE .380 4L FLG  
FEATURES:  
PG = 10 dB min. at 30 W/ 150 MHz  
Withstands 30:1 Load VSWR  
Omnigold™ Metalization System  
MAXIMUM RATINGS  
3.4 A  
65 V  
IC  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
35 V  
4.0 V  
82 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
2.13 °C/W  
TSTG  
θJC  
ORDER CODE: ASI10872  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 30 mA  
IC = 30 mA  
IE = 3.0 mA  
VE = 30 V  
35  
V
BVCES  
BVEBO  
ICBO  
65  
V
4.0  
V
3.0  
80  
mA  
---  
hFE  
V
CE = 5.0 V  
IC = 1.5 A  
20  
COB  
V
CB = 30 V  
f = 1.0 MHz  
f = 150 MHz  
30  
40  
pF  
10  
50  
13.5  
PG  
ηC  
dB  
%
VCC = 28 V  
POUT = 30 W  
ψ
30:1 all phase angles, no degadation in output.  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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