Datasheet > MRF323

MRF323

更新时间： 2024-01-30 03:07:09

品牌	Logo	应用领域
ASI		晶体晶体管射频放大器
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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MRF323 数据手册

MRF323

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .280" 4L STUD

The MRF323 is Designed for

Wide Band Large-Signal Driver and

Predriver Applications in the

200 to 500 MHz Range.

45°

FEATURES INCLUDE:

• Gold Metalization

• 30:1 VSWR

#8-32 UNC

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

2.2 A ^(CONT)

3.0 A ^(PEAK)

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

I_C

60 V

V_CB

P_DISS

T_STG

θ_JC

55 W @ T_C= 25 ^OC

-65 ^OC to +150 ^OC

3.2 ^OC/W

.572 / 14.53

.130 / 3.30

.245 / 6.22

.255 / 6.48

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CBO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 20 mA

I_E= 2.0 mA

V_CB= 30 V

I_C= 1.0 A

4.0

BV_CES

BV_CEO

BV_EBO

I_CBO

2.0

---

V_CE= 5.0 V

h_FE

V_CB= 28 V

f = 1.0 MHz

C_ob

G_PE

V_CC= 28 V

P_out= 20 W

f = 400 MHz

NO DEGRADATION IN OUTPUT POWER

VSWR = 30:1 ALL PHASE ANGLES

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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MRF323 替代型号

型号	品牌	替代类型	描述	数据表
MRF323	MACOM	功能相似	Bipolar
SD1477	STMICROELECTRONICS	功能相似	RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
SD1275-01	STMICROELECTRONICS	功能相似	RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

与MRF323相关器件

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MRF329	MOTOROLA	获取价格	BROADBAND RF POWER TRANSISTOR NPN SILICON
MRF329	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
MRF329	NJSEMI	获取价格	Bipolar Transistor