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MRF372

更新时间： 2024-10-01 05:50:11

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RF Power Field-Effect Transistor

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MRF372 数据手册

Document Number: MRF372

Rev. 9, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field-Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRF372R3

MRF372R5

Designed for broadband commercial and industrial applications with frequen-

cies from 470 to 860 MHz. The high gain and broadband performance of this

device make it ideal for large-signal, common source amplifier applications in

32 volt transmitter equipment.

• Typical Narrowband Two-Tone Performance @ f1 = 857 MHz,

f2 = 863 MHz, 32 Volts

Output Power — 180 Watts PEP

Power Gain — 17 dB

470-860 MHz, 180 W, 32 V

LATERAL N-CHANNEL

RF POWER MOSFET

Efficiency — 36%

IMD — -35 dBc

• Typical Broadband Two-Tone Performance @ f1 = 857 MHz,

f2 = 863 MHz, 32 Volts

Output Power — 180 Watts PEP

Power Gain — 14.5 dB

Efficiency — 37%

IMD — -31 dBc

• Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output

Power

Features

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Excellent Thermal Stability

CASE 375G-04, STYLE 1

NI-860C3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +15

Unit

Vdc

Adc

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.0

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

-65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Table 3. ESD Protection Characteristics

Test Conditions

0.5

°C/W

Class

Human Body Model

1 (Minimum)

M3 (Minimum)

Machine Model

MRF372R3 MRF372R5

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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