MRF329

更新时间： 2024-10-01 10:47:31

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	14K
描述
NPN SILICON RF POWER TRANSISTOR

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MRF329 数据手册

MRF329

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MRF329 is Designed for

Wide Band Large-Signal Output and

Driver Amplifier Stages in the

PACKAGE STYLE .400X.425" 6L FLG.

100-500 MHz Frequency Range.

FEATURES INCLUDE:

• Gold Metalization

• 3:1 VSWR

• I/O Network Matching

MAXIMUM RATINGS

9.0 A ^(CONT)

12.0 A ^(PEAK)

I_C

60 V

V_CB

P_DISS

T_J

270 W @ T_C= 25 ^OC

-65 ^OC to +150 ^OC

0.65 ^OC/W

T_STG

θ_JC

1 & 3 = EMITTER

2 = COLLECTOR

4 = BASE

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CBO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 80 mA

I_E= 8.0 mA

V_CB= 30 V

V_CE= 5.0 V

4.0

BV_CES

BV_CEO

BV_EBO

I_CBO

5.0

---

h_FE

I_C= 4.0 A

C_ob

V_CB= 28 V

V_CC= 28 V

f = 1.0 MHz

f = 400 MHz

125

G_PE

7.0

9.7

P_out= 100 W

V_CC= 28 V

_SWR= 3:1

P_out= 100 W

ALL PHASE ANGLES

NO DEGRADATION IN OUTPUT POWER

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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