5秒后页面跳转
MRF373ALR1_08 PDF预览

MRF373ALR1_08

更新时间: 2024-10-01 05:50:11
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
10页 367K
描述
RF Power Field Effect Transistors

MRF373ALR1_08 数据手册

 浏览型号MRF373ALR1_08的Datasheet PDF文件第2页浏览型号MRF373ALR1_08的Datasheet PDF文件第3页浏览型号MRF373ALR1_08的Datasheet PDF文件第4页浏览型号MRF373ALR1_08的Datasheet PDF文件第5页浏览型号MRF373ALR1_08的Datasheet PDF文件第6页浏览型号MRF373ALR1_08的Datasheet PDF文件第7页 
Document Number: MRF373A  
Rev. 7, 9/2008  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF373ALR1  
MRF373ALSR1  
Designed for broadband commercial and industrial applications with frequen-  
cies from 470 to 860 MHz. The high gain and broadband performance of these  
devices make them ideal for large-signal, common source amplifier applica-  
tions in 28/32 volt transmitter equipment.  
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture  
470-860 MHz, 75 W, 32 V  
LATERAL N-CHANNEL  
BROADBAND  
Output Power — 75 Watts  
Power Gain — 18.2 dB  
Efficiency — 60%  
D
Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,  
RF POWER MOSFETs  
75 Watts CW Output Power  
Features  
Integrated ESD Protection  
Excellent Thermal Stability  
Characterized with Series Equivalent Large-Signal  
G
Impedance Parameters  
CASE 360B-05, STYLE 1  
NI-360  
Low Gold Plating Thickness on Leads.  
L Suffix Indicates 40μ″ Nominal.  
MRF373ALR1  
S
RoHS Compliant  
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.  
CASE 360C-05, STYLE 1  
NI-360S  
MRF373ALSR1  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
-0.5, +70  
-0.5, +15  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
MRF373ALR1  
P
D
197  
1.12  
278  
W
W/°C  
W
C
MRF373ALSR1  
1.59  
W/°C  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
-65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
MRF373ALR1  
MRF373ALSR1  
R
0.89  
0.63  
°C/W  
θ
JC  
Table 3. ESD Protection Characteristics  
Test Conditions  
Class  
Human Body Model  
1 (Minimum)  
Machine Model  
MRF373ALR1  
MRF373ALSR1  
M2 (Minimum)  
M1 (Minimum)  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  

与MRF373ALR1_08相关器件

型号 品牌 获取价格 描述 数据表
MRF373ALSR1 FREESCALE

获取价格

RF Power Field Effect Transistors
MRF373ALSR1 MOTOROLA

获取价格

RF Power Field Effect Transistors
MRF373AR1 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF373AS MOTOROLA

获取价格

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN
MRF373ASR1 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF373R1 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF373S MOTOROLA

获取价格

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MO
MRF373SR1 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF374 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
MRF374 NJSEMI

获取价格

Trans RF MOSFET N-CH 65V 7A 5-Pin Case 375F-04