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MRF372R3 PDF预览

MRF372R3

更新时间: 2024-11-21 05:50:11
品牌 Logo 应用领域
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页数 文件大小 规格书
16页 506K
描述
RF Power Field-Effect Transistor

MRF372R3 数据手册

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Document Number: MRF372  
Rev. 9, 5/2006  
Freescale Semiconductor  
Technical Data  
RF Power Field-Effect Transistor  
N-Channel Enhancement-Mode Lateral MOSFET  
MRF372R3  
MRF372R5  
Designed for broadband commercial and industrial applications with frequen-  
cies from 470 to 860 MHz. The high gain and broadband performance of this  
device make it ideal for large-signal, common source amplifier applications in  
32 volt transmitter equipment.  
Typical Narrowband Two-Tone Performance @ f1 = 857 MHz,  
f2 = 863 MHz, 32 Volts  
Output Power — 180 Watts PEP  
Power Gain — 17 dB  
470-860 MHz, 180 W, 32 V  
LATERAL N-CHANNEL  
RF POWER MOSFET  
Efficiency — 36%  
IMD — -35 dBc  
Typical Broadband Two-Tone Performance @ f1 = 857 MHz,  
f2 = 863 MHz, 32 Volts  
Output Power — 180 Watts PEP  
Power Gain — 14.5 dB  
Efficiency — 37%  
IMD — -31 dBc  
Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output  
Power  
Features  
Internally Matched for Ease of Use  
Integrated ESD Protection  
Excellent Thermal Stability  
CASE 375G-04, STYLE 1  
NI-860C3  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
RoHS Compliant  
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +68  
-0.5, +15  
17  
Unit  
Vdc  
Vdc  
Adc  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
V
DSS  
V
GS  
I
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
350  
2.0  
W
W/°C  
C
D
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
-65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Table 3. ESD Protection Characteristics  
Test Conditions  
R
θ
JC  
0.5  
°C/W  
Class  
Human Body Model  
1 (Minimum)  
M3 (Minimum)  
Machine Model  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  

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