Datasheet > MRF373ALSR1

MRF373ALSR1

更新时间： 2024-11-18 05:50:11

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描述
RF Power Field Effect Transistors

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数据手册

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MRF373ALSR1 数据手册

Document Number: MRF373A

Rev. 7, 9/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF373ALR1

MRF373ALSR1

Designed for broadband commercial and industrial applications with frequen-

cies from 470 to 860 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common source amplifier applica-

tions in 28/32 volt transmitter equipment.

• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture

470-860 MHz, 75 W, 32 V

LATERAL N-CHANNEL

BROADBAND

Output Power — 75 Watts

Power Gain — 18.2 dB

Efficiency — 60%

• Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,

RF POWER MOSFETs

75 Watts CW Output Power

Features

• Integrated ESD Protection

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal

Impedance Parameters

CASE 360B-05, STYLE 1

NI-360

• Low Gold Plating Thickness on Leads.

L Suffix Indicates 40μ″ Nominal.

MRF373ALR1

• RoHS Compliant

• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.

CASE 360C-05, STYLE 1

NI-360S

MRF373ALSR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +70

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

MRF373ALR1

197

1.12

278

W/°C

MRF373ALSR1

1.59

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

-65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

MRF373ALR1

MRF373ALSR1

0.89

0.63

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

MRF373ALR1

MRF373ALSR1

M2 (Minimum)

M1 (Minimum)

MRF373ALR1 MRF373ALSR1

Freescale Semiconductor

RF Product Device Data

12 3 4 5 6 7...10

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