ꢓ ꢔꢏ ꢔ ꢀꢔ ꢕꢖ
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF372/D
The RF MOSFET Line
ꢀ ꢁ ꢂ ꢃꢄ ꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋ ꢌꢌ ꢅꢍ ꢎ ꢏꢆ ꢐꢑ ꢒ ꢇꢒ ꢎꢃ ꢆ
ꢓ
ꢀ
ꢁ
ꢗ
ꢘ
ꢙ
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
32 volt transmitter equipment.
• Typical Narrowband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
470 – 860 MHz, 180 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — –35 dBc
• Typical Broadband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — –31 dBc
• Internally Matched, Controlled Q, for Ease of Use
• Integrated ESD Protection
• 100% Tested for Load Mismatch Stress at All Phase Angles
CASE 375G–04, STYLE 1
NI–860C3
with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS (1)
Rating
Symbol
Value
68
Unit
Drain–Source Voltage
Gate–Source Voltage
V
DSS
Vdc
Vdc
Adc
V
GS
– 0.5, +15
17
Drain Current – Continuous
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.0
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
– 65 to +150
200
°C
°C
stg
T
J
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
M3 (Minimum)
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(1) Each side of device measured separately.
R
0.5
°C/W
θ
JC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF DEVICE DATA
MRF372
1
Motorola, Inc. 2002