Datasheet > MRF313

MRF313

更新时间： 2024-01-20 06:15:27

品牌	Logo	应用领域
泰科 - TE		晶体晶体管放大器
页数	文件大小	规格书
3页	86K
描述
HIGH-FREQUENCY TRANSISTOR NPN SILICON

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中文翻译

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技术参数
数据手册
替代型号

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MRF313 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	0.15 A	配置：	Single
最高工作温度：	175 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	2.5 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

MRF313 数据手册

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SEMICONDUCTOR TECHNICAL DATA

by MRF313/D

The RF Line

NP N S ilic on

H ig h- F re qu enc y Tra n sis t or

. . . designed for wideband amplifier, driver or oscillator applications in military,

mobile, and aircraft radio.

•

Specified 28 Volt, 400 MHz Characteristics —

Output Power = 1.0 Watt

1.0 W, 400 MHz

HIGH–FREQUENCY

TRANSISTOR

Power Gain = 15 dB Min

Efficiency = 45% Typ

•

Emitter Ballast and Low Current Density for Improved MTBF

Common Emitter for Improved Stability

NPN SILICON

CASE 305A–01, STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Vdc

3.0

Vdc

Collector Current — Continuous

150

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

6.1

Watts

mW/°C

Storage Temperature Range

THERMAL CHARACTERISTICS

stg

–65 to +150

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

28.5

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = 10 mAdc, I = 0)

(BR)CEO

3.0

—

Vdc

Collector–Emitter Breakdown Voltage (I = 5.0 mAdc, V = 0)

(BR)CES

(BR)CBO

(BR)EBO

Collector–Base Breakdown Voltage (I = 0.1 mAdc, I = 0)

—

Vdc

Emitter–Base Breakdown Voltage (I = 1.0 mAdc, I = 0)

—

Vdc

Collector Cutoff Current (V = 20 Vdc, I = 0)

CEO

1.0

mAdc

(continued)

12 3

中文翻译

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MRF313 替代型号

型号	品牌	替代类型	描述	数据表
MRF313	MACOM	功能相似	Bipolar

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