MRF284S

更新时间： 2024-11-23 22:45:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	138K
描述
RF Power Field-Effect Transistors

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替代型号

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MRF284S 数据手册

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SEMICONDUCTOR TECHNICAL DATA

The RF Sub–Micron MOSFET Line

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from

1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

applications. To be used in class A and class AB for PCN–PCS/cellular radio

and wireless local loop.

30 W, 2000 MHz, 26 V

LATERAL N–CHANNEL

BROADBAND

•

Specified Two–Tone Performance @ 2000 MHz, 26 Volts

Output Power = 30 Watts (PEP)

Power Gain = 9 dB

RF POWER MOSFETs

Efficiency = 30%

Intermodulation Distortion = –29 dBc

•

Typical Single–Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts (CW)

Power Gain = 9.5 dB

Efficiency = 45%

CASE 360B–01, STYLE 1

(MRF284)

•

Characterized with Series Equivalent Large–Signal Impedance Parameters

S–Parameter Characterization at High Bias Levels

Excellent Thermal Stability

Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)

Output Power

CASE 360C–03, STYLE 1

(MRF284S)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

±20

Total Device Dissipation @ T = 25°C

Derate above 25°C

87.5

0.5

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

2.0

°C/W

θJC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(V = 0, I = 10 µAdc)

—

1.0

Vdc

µAdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 20 Vdc, V = 0)

DSS

GSS

Gate–Source Leakage Current

(V = 20 Vdc, V = 0)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 3

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRF284 MRF284S

12 3 4 5 6 7...12

中文翻译

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MRF284S 替代型号

型号	品牌	替代类型	描述	数据表
MRF284	MOTOROLA	功能相似	RF Power Field-Effect Transistors

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型号	品牌	获取价格	描述	数据表
MRF284SC	NJSEMI	获取价格	Trans RF MOSFET N-CH 65V 3-Pin NI-360S T/R
MRF284SR1	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN
MRF2857HXV	MOTOROLA	获取价格	Transistor
MRF286	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
MRF286S	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
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MRF2947AT1	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947AT2	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947RAT1	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947RAT2	MOTOROLA	获取价格	LOW NOISE TRANSISTORS

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