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MRF2947AT1 PDF预览

MRF2947AT1

更新时间: 2024-11-19 22:45:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
12页 185K
描述
LOW NOISE TRANSISTORS

MRF2947AT1 数据手册

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Order this document  
by MRF2947/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Motorola’s MRF2947 device contains two high performance, low–noise NPN  
silicon bipolar transistors. This device has two 941 die housed in the high  
performance six leaded SC–70ML package; yielding a 9 GHz current  
gain–bandwidth product.  
The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well  
suited for low–voltage, low–current, front–end applications such as paging,  
cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947  
is fully ion–implanted with gold metallization and nitride passivation for  
maximum device reliability, performance and uniformity.  
I
= 50 mA  
LOW NOISE  
Cmax  
TRANSISTORS  
Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA  
High Current Gain–Bandwidth Product, f = 9 GHz (Typ) @ 6 Volts, 15 mA  
t
Maximum Stable Gain, 18 dB @ 1 GHz @ 5 mA  
Output Third Order Intercept, OIP = +27 dBm  
3
CASE 419B–01, STYLES 16 & 17  
SC–70ML/SOT–363  
Available in Tape and Reel Packaging Options:  
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel  
T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device  
orientation in tape)  
STYLE 16  
STYLE 17  
B1  
E2  
C2  
C1 B1  
E1 E1  
B2 C2  
C1  
E2  
B2  
MRF2947AT1,T2  
MRF2947RAT1,T2  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
10  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
20  
Vdc  
1.5  
Vdc  
Power Dissipation (1) T = 75°C  
P
Dmax  
0.188  
2.5  
Watts  
mW/°C  
C
Derate linearly above T = 75°C @  
C
Collector Current — Continuous (2)  
Maximum Junction Temperature  
Storage Temperature  
I
50  
150  
mA  
C
T
°C  
Jmax  
T
stg  
55 to +150  
400  
°C  
Thermal Resistance, Junction to Case  
DEVICE MARKINGS  
R
°C/W  
θJC  
MRF2947AT1,T2 = WU  
MRF2947RAT1,T2 = XR  
(1) To calculate the junction temperature use T = P x R + T . The case temperature is measured on collector lead adjacent to the package  
θJC C  
J
D
body.  
(2) I — Continuous (MTBF > 10 years).  
C
Motorola, Inc. 1997  

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