Order this document
by MRF2947/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Motorola’s MRF2947 device contains two high performance, low–noise NPN
silicon bipolar transistors. This device has two 941 die housed in the high
performance six leaded SC–70ML package; yielding a 9 GHz current
gain–bandwidth product.
The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well
suited for low–voltage, low–current, front–end applications such as paging,
cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947
is fully ion–implanted with gold metallization and nitride passivation for
maximum device reliability, performance and uniformity.
I
= 50 mA
LOW NOISE
Cmax
TRANSISTORS
•
•
•
•
•
Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA
High Current Gain–Bandwidth Product, f = 9 GHz (Typ) @ 6 Volts, 15 mA
t
Maximum Stable Gain, 18 dB @ 1 GHz @ 5 mA
Output Third Order Intercept, OIP = +27 dBm
3
CASE 419B–01, STYLES 16 & 17
SC–70ML/SOT–363
Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel
T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device
orientation in tape)
STYLE 16
STYLE 17
B1
E2
C2
C1 B1
E1 E1
B2 C2
C1
E2
B2
MRF2947AT1,T2
MRF2947RAT1,T2
MAXIMUM RATINGS
Rating
Symbol
Value
10
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
20
Vdc
1.5
Vdc
Power Dissipation (1) T = 75°C
P
Dmax
0.188
2.5
Watts
mW/°C
C
Derate linearly above T = 75°C @
C
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
I
50
150
mA
C
T
°C
Jmax
T
stg
–55 to +150
400
°C
Thermal Resistance, Junction to Case
DEVICE MARKINGS
R
°C/W
θJC
MRF2947AT1,T2 = WU
MRF2947RAT1,T2 = XR
(1) To calculate the junction temperature use T = P x R + T . The case temperature is measured on collector lead adjacent to the package
θJC C
J
D
body.
(2) I — Continuous (MTBF > 10 years).
C
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF2947AT1,T2 MRF2947RAT1,T2
1