Datasheet > MRF300AN

MRF300AN

更新时间： 2024-11-18 15:19:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
42页	1282K
描述
RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

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MRF300AN 数据手册

Document Number: MRF300AN

Rev. 2, 06/2019

NXP Semiconductors

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

MRF300AN

MRF300BN

These devices are designed for use in HF and VHF communications,

industrial, scientific and medical (ISM) and broadcast and aerospace

applications. The devices are extremely rugged and exhibit high performance

up to 250 MHz.

1.8–250 MHz, 300 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Typical Performance: V_DD= 50 Vdc

Frequency

(MHz)

(W)

(dB)



(%)

out

Signal Type

(1)

13.56

320 CW

330 CW

320 CW

325 CW

320 CW

330 Peak

28.1

27.4

28.2

27.3

25.1

23.0

20.4

79.7

80.0

79.0

73.0

77.5

73.0

75.5

(2)

(3)

40.68

(4)

(5)

81.36

(6)

144

(7)

230

Pulse

T O -- 2 4 7 -- 3

MRF300AN

(100 sec, 20% Duty Cycle)

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

40.68

Pulse

(100 sec, 20%

Duty Cycle)

> 65:1 at all

Phase

Angles

2 Peak

(3 dB

Overdrive)

No Device

Degradation

230

Pulse

(100 sec, 20%

Duty Cycle)

> 65:1 at all

Phase

Angles

6 Peak

(3 dB

Overdrive)

No Device

Degradation

1. Measured in 13.56 MHz reference circuit (page 5).

2. Measured in 27 MHz reference circuit (page 10).

3. Measured in 40.68 MHz reference circuit (page 15).

4. Measured in 50 MHz reference circuit (page 20).

5. Measured in 81.36 MHz reference circuit (page 25).

6. Measured in 144 MHz reference circuit (page 30).

7. Measured in 230 MHz fixture (page 35).

T O -- 2 4 7 -- 3

MRF300BN

Features



Mirror pinout versions (A and B) to simplify use in a push--pull,

two--up configuration



Characterized from 30 to 50 V

Suitable for linear application

Integrated ESD protection with greater negative gate--source

voltage range for improved Class C operation

Included in NXP product longevity program with assured

supply for a minimum of 15 years after launch

Backside

Note: Exposed backside of the package

also serves as a source terminal

for the transistor.



Typical Applications



Industrial, scientific, medical (ISM)

– Laser generation

– Plasma etching

– Particle accelerators

– MRI and other medical applications

– Industrial heating, welding and drying systems

Radio and VHF TV broadcast

HF and VHF communications

Switch mode power supplies



 2018–2019 NXP B.V.

MRF300AN MRF300BN

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...42

中文翻译

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与MRF300AN相关器件

型号	品牌	获取价格	描述	数据表
MRF300AN-144MHZ	NXP	获取价格	RF Power Field-Effect Transistor
MRF300AN-230MHZ	NXP	获取价格	RF Power Field-Effect Transistor
MRF300AN-50MHZ	NXP	获取价格	RF Power Field-Effect Transistor
MRF300BN	NXP	获取价格	RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
MRF3010	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
MRF306	MOTOROLA	获取价格	RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, CASE 278-
MRF3094	MOTOROLA	获取价格	MICROWAVE LINEAR POWER TRANSISTORS
MRF3095	MOTOROLA	获取价格	MICROWAVE LINEAR POWER TRANSISTORS
MRF3096	MOTOROLA	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF3104	TE	获取价格	MICROWAVE LINEAR POWER TRANSISTORS

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