Datasheet > MRF286

MRF286

更新时间： 2024-11-20 04:14:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	200K
描述
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF286 数据手册

Order this document

SEMICONDUCTOR TECHNICAL DATA

from WISD RF Marketing

The RF Sub–Micron MOSFET Line

N–Channel Enhancement–Mode Lateral MOSFETs

Order sample parts by XRF286,S

PILOT PRODUCTION PROTOTYPE

Designed for PCN and PCS base station applications at frequencies from

1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

applications. To be used in class A and class AB for PCN–PCS/cellular radio

and WLL applications.

2000 MHz, 60 W, 26 V

LATERAL N–CHANNEL

BROADBAND

•

Specified Two–Tone Performance @ 2000 MHz, 26 Volts

Output Power — 60 Watts (PEP)

Power Gain — 9.5 dB

Intermodulation Distortion — –28 dBc

RF POWER MOSFETs

•

Typical Two–Tone Performance at 2000 MHz, 26 Volts

Output Power — 60 Watts (PEP)

Power Gain — 10.5 dB

Efficiency — 32%

Intermodulation Distortion — –30 dBc

CASE 465–04, STYLE 1

(MRF286)

•

S–Parameter Characterization at High Bias Levels

Capable of Handling 10:1 VSWR, @ 26 Vdc,

2000 MHz, 60 Watts (CW) Output Power

•

Excellent Thermal Stability

Characterized with Series Equivalent Large–Signal Impedance Parameters

CASE 465A–04, STYLE 1

(MRF286S)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

±20

Total Device Dissipation @ T = 25°C

Derate above 25°C

240

1.37

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.73

°C/W

θJC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

“PILOT PRODUCTION PROTOTYPE (“X” Status)” devices are preproduction products and may not be released or produced in volume.

“X” status devices are for engineering evaluation and should not be used for production. Specifications are subject to change without notice.

REV 3

MOTOROLA RF DEVICE DATA

Motorola, Inc. 2000

MRF286 MRF286S

12 3 4 5 6 7 8

中文翻译

下载PDF

与MRF286相关器件

型号	品牌	获取价格	描述	数据表
MRF286S	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
MRF2947	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947AT1	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947AT2	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947RAT1	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947RAT2	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2AMMO	BEL	获取价格	Electric Fuse, Fast Blow, 2A, 35A (IR), MICRO,
MRF3.15	BEL	获取价格	Fast Acting Radial Lead Micro Fuse Series
MRF3.15AMMO	BEL	获取价格	Electric Fuse, Fast Blow, 3.15A, 35A (IR), MICRO,
MRF300A-27MHZ	NXP	获取价格	RF Power Field-Effect Transistor