Datasheet > MRF284LSR1

MRF284LSR1

更新时间： 2024-09-27 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	376K
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RF Power Field Effect Transistors

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MRF284LSR1 数据手册

Document Number: MRF284

Rev. 17, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF284LR1

N-Channel Enhancement-Mode Lateral MOSFETs

MRF284LSR1

Designed for PCN and PCS base station applications with frequencies from

1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

applications. To be used in Class A and Class AB for PCN-PCS/cellular radio

and wireless local loop.

2000 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

• Specified Two-Tone Performance @ 2000 MHz, 26 Volts

Output Power = 30 Watts PEP

Power Gain = 9 dB

RF POWER MOSFETs

Efficiency = 30%

Intermodulation Distortion = -29 dBc

• Typical Single-Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts CW

Power Gain = 9.5 dB

Efficiency = 45%

CASE 360B-05, STYLE 1

NI-360

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW

Output Power

MRF284LR1

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant

CASE 360C-05, STYLE 1

NI-360S

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

MRF284LSR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

87.5

0.5

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

2.0

°C/W

Table 3. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

(V = 0, I = 10 μAdc)

—

1.0

Vdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 20 Vdc, V = 0)

μAdc

DSS

Gate-Source Leakage Current

(V = 20 Vdc, V = 0)

μAdc

GSS

(continued)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF284LR1 MRF284LSR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF284LSR1相关器件

型号	品牌	获取价格	描述	数据表
MRF284R1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 3 PIN
MRF284S	MOTOROLA	获取价格	RF Power Field-Effect Transistors
MRF284SC	NJSEMI	获取价格	Trans RF MOSFET N-CH 65V 3-Pin NI-360S T/R
MRF284SR1	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN
MRF2857HXV	MOTOROLA	获取价格	Transistor
MRF286	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
MRF286S	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
MRF2947	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947AT1	MOTOROLA	获取价格	LOW NOISE TRANSISTORS
MRF2947AT2	MOTOROLA	获取价格	LOW NOISE TRANSISTORS

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