Datasheet > MRF282ZR1

MRF282ZR1

更新时间： 2024-09-27 11:48:03

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	299K
描述
RF Power Field Effect Transistors

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数据手册

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MRF282ZR1 数据手册

Document Number: MRF282

Rev. 15, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF282SR1

MRF282ZR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for Class A and Class AB PCN and PCS base station applications

with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

multicarrier amplifier applications.

• Specified Two-Tone Performance @ 2000 MHz, 26 Volts

Output Power — 10 Watts PEP

Power Gain — 10.5 dB

2000 MHz, 10 W, 26 V

LATERAL N-CHANNEL

BROADBAND

Efficiency — 28%

Intermodulation Distortion — -31 dBc

RF POWER MOSFETs

• Specified Single-Tone Performance @ 2000 MHz, 26 Volts

Output Power — 10 Watts CW

Power Gain — 9.5 dB

Efficiency — 35%

• Capable of Handling 10:1 VSWR, @ 26 Vdc,

2000 MHz, 10 Watts CW Output Power

Features

CASE 458B-03, STYLE 1

NI-200S

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal

MRF282SR1

Impedance Parameters

• RoHS Compliant

• Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.

CASE 458C-03, STYLE 1

NI-200Z

MRF282ZR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.34

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

4.2

°C/W

Table 3. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

(V = 0, I = 10 μAdc)

—

Vdc

μAdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 28 Vdc, V = 0)

1.0

DSS

Gate-Source Leakage Current

(V = 20 Vdc, V = 0)

GSS

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF282SR1 MRF282ZR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF282ZR1相关器件

型号	品牌	获取价格	描述	数据表
MRF284	MOTOROLA	获取价格	RF Power Field-Effect Transistors
MRF284	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF284	NJSEMI	获取价格	Trans RF MOSFET N-CH 65V 3-Pin NI-360
MRF284LR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF284LR1	ROCHESTER	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
MRF284LR1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 2 PIN
MRF284LSR1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360S, CASE 360C-05, 2 PIN
MRF284LSR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF284R1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 3 PIN
MRF284S	MOTOROLA	获取价格	RF Power Field-Effect Transistors

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