Order this document
by MRF282/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for class A and class AB PCN and PCS base station applications at
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications.
10 W, 2000 MHz, 26 V
LATERAL N–CHANNEL
BROADBAND
•
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (PEP)
Power Gain = 11 dB
RF POWER MOSFETs
Efficiency = 30%
Intermodulation Distortion = –30 dBc
•
•
Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (CW)
Power Gain = 11 dB
Efficiency = 40%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
CASE 458–03, STYLE 1
(MRF282S)
•
•
•
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts (CW) Output Power
CASE 458A–01, STYLE 1
(MRF282Z)
•
Gold Metallization for Improved Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Gate–Source Voltage
V
DSS
V
GS
±20
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
60
0.34
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
2.9
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V = 0, I = 10 µAdc)
V
65
—
—
—
—
—
—
Vdc
µAdc
µAdc
(BR)DSS
GS
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0)
D
I
1.0
1.0
DSS
GSS
DS
Gate–Source Leakage Current
(V = 20 Vdc, V = 0)
GS
I
GS
DS
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF282S MRF282Z
1