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MRF282 PDF预览

MRF282

更新时间: 2024-11-23 22:45:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 射频
页数 文件大小 规格书
11页 146K
描述
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

MRF282 数据手册

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Order this document  
by MRF282/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Sub–Micron MOSFET Line  
N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for class A and class AB PCN and PCS base station applications at  
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier  
amplifier applications.  
10 W, 2000 MHz, 26 V  
LATERAL N–CHANNEL  
BROADBAND  
Specified Two–Tone Performance @ 2000 MHz, 26 Volts  
Output Power = 10 Watts (PEP)  
Power Gain = 11 dB  
RF POWER MOSFETs  
Efficiency = 30%  
Intermodulation Distortion = –30 dBc  
Specified Single–Tone Performance @ 2000 MHz, 26 Volts  
Output Power = 10 Watts (CW)  
Power Gain = 11 dB  
Efficiency = 40%  
Characterized with Series Equivalent Large–Signal  
Impedance Parameters  
CASE 458–03, STYLE 1  
(MRF282S)  
S–Parameter Characterization at High Bias Levels  
Excellent Thermal Stability  
Capable of Handling 10:1 VSWR, @ 26 Vdc,  
2000 MHz, 10 Watts (CW) Output Power  
CASE 458A–01, STYLE 1  
(MRF282Z)  
Gold Metallization for Improved Reliability  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
V
GS  
±20  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
60  
0.34  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
2.9  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain–Source Breakdown Voltage  
(V = 0, I = 10 µAdc)  
V
65  
Vdc  
µAdc  
µAdc  
(BR)DSS  
GS  
Zero Gate Voltage Drain Current  
(V = 28 Vdc, V = 0)  
D
I
1.0  
1.0  
DSS  
GSS  
DS  
Gate–Source Leakage Current  
(V = 20 Vdc, V = 0)  
GS  
I
GS  
DS  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 1  
Motorola, Inc. 1997  

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