Datasheet > MRF281

MRF281

更新时间： 2024-11-19 22:45:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	313K
描述
RF POWER FIELD EFFECT TRANSISTORS

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中文翻译

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数据手册

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MRF281 数据手册

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SEMICONDUCTOR TECHNICAL DATA

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by MRF281/D

The RF Sub–Micron MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

Designed for digital and analog cellular PCN and PCS base station

applications with frequencies from 1000 to 2500 MHz. Characterized for

operation Class A and Class AB at 26 volts in commercial and industrial

applications.

2000 MHz, 4 W, 26 V

LATERAL N–CHANNEL

BROADBAND

• Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts

Output Power — 4 Watts PEP

Power Gain — 11 dB

Efficiency — 30%

Intermodulation Distortion — –29 dBc

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 26 Vdc,

2000 MHz, 4 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

CASE 458B–03, STYLE 1

(NI–200S)

• Available in Tape and Reel. R1 Suffix = 500 Units per

12 mm, 7 inch Reel.

(MRF281SR1)

CASE 458C–03, STYLE 1

(NI–200Z)

(MRF281ZR1)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.115

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

5.74

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

—

Vdc

µAdc

(BR)DSS

(V = 0, I = 10 µAdc)

Zero Gate Voltage Drain Current

(V = 28 Vdc, V = 0)

DSS

Gate–Source Leakage Current

(V = 20 Vdc, V = 0)

GSS

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 3

MOTOROLA RF DEVICE DATA

MRF281SR1 MRF281ZR1

 Motorola, Inc. 2002

12 3 4 5 6 7 8

中文翻译

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与MRF281相关器件

型号	品牌	获取价格	描述	数据表
MRF281SR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF281SR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF281SR1_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF281ZR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF281ZR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF282	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF282S	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282SR1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-200S, CASE 458B-03, 2 PIN
MRF282SR1	FREESCALE	获取价格	RF Power Field Effect Transistors

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