Datasheet > MRF175GU1111

MRF175GU1111

更新时间： 2024-11-17 22:32:55

品牌	Logo	应用领域
泰科 - TE		射频
页数	文件大小	规格书
10页	209K
描述
N-CHANNEL MOS BROADBAND RF POWER FETs

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MRF175GU1111 数据手册

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SEMICONDUCTOR TECHNICAL DATA

by MRF176GU/D

The RF MOSFET Line

N–Channel Enhancement–Mode

Designed for broadband commercial and military applications using push pull

circuits at frequencies to 500 MHz. The high power, high gain and broadband

performance of these devices makes possible solid state transmitters for FM

broadcast or TV channel frequency bands.

200/150 W, 50 V, 500 MHz

N–CHANNEL MOS

BROADBAND

•

Electrical Performance

RF POWER FETs

MRF176GU @ 50 V, 400 MHz (“U” Suffix)

Output Power — 150 Watts

Power Gain — 14 dB Typ

Efficiency — 50% Typ

MRF176GV @ 50 V, 225 MHz (“V” Suffix)

Output Power — 200 Watts

Power Gain — 17 dB Typ

Efficiency — 55% Typ

(

)

•

100% Ruggedness Tested At Rated Output Power

Low Thermal Resistance

Low C_rss— 7.0 pF Typ @ V_DS= 50 V

CASE 375–04, STYLE 2

MAXIMUM RATINGS

Rating

Symbol

Value

125

±40

Unit

Vdc

Adc

Drain–Source Voltage

Gate–Source Voltage

DSS

Drain Current — Continuous

Total Device Dissipation @ T = 25°C

400

Watts

Derate above 25°C

2.27

W/°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

–65 to +150

200

°C

stg

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.44

°C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(V = 0, I = 100 mA)

125

—

Vdc

mAdc

µAdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 50 V, V = 0)

2.5

1.0

DSS

Gate–Body Leakage Current

(V = 20 V, V = 0)

—

GSS

NOTE:

1. Each side of device measured separately.

REV 9

12 3 4 5 6 7...10

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MRF175GV	MACOM	获取价格	The RF MOSFET Line 200/150W, 500MHz, 28V
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MRF175LU	MACOM	获取价格	The RF MOSFET Line 100W, 400MHz, 28V
MRF175LV	MOTOROLA	获取价格	N-CHANNEL BROADBAND RF POWER FETs
MRF175LV	TE	获取价格	N-CHANNEL BROADBAND RF POWER FETs
MRF176	MOTOROLA	获取价格	N-CHANNEL MOS BROADBAND RF POWER FETs