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MRF175GV

更新时间: 2024-11-18 10:47:31
品牌 Logo 应用领域
ASI 晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数 文件大小 规格书
1页 22K
描述
RF POWER FIELD-EFFECT TRANSISTOR

MRF175GV 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.26Is Samacsys:N
外壳连接:SOURCE配置:Single
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):26 A
最大漏极电流 (ID):26 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F4
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):400 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF175GV 数据手册

  
MRF175GV  
RF POWER FIELD-EFFECT TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE  
The ASI MRF175GV is a N-Channel  
Enhancement-Mode Push Pull  
MOSFET, Designed for FM, and TV  
Solid State Transmitter Applications up  
to 500 MHz.  
MAXIMUM RATINGS  
26 A  
ID  
65 V  
VDSS  
PDISS  
TJ  
400 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
0.44 OC/W  
TSTG  
θJC  
1 = DRAIN  
4 = GATE(2)  
2 = DRAIN(2)  
5 = SOURCE (1&2) -CASE  
3 = GATE(1)  
CHARACTERISTICS TC = 25 O  
C
NONE  
SYMBOL  
V(BR)DSS  
TEST CONDITIONS  
VGS = 0 V  
MINIMUM TYPICAL MAXIMUM UNITS  
ID = 50 mA  
VDS = 28 V  
VDS = 0 V  
ID =100 mA  
ID = 5.0 A  
ID = 2.5 A  
65  
V
mA  
µA  
IDSS  
IGSS  
VGS = 0 V  
2.5  
1.0  
6.0  
1.5  
VGS = 20 V  
VDS = 10 V  
VGS = 10 V  
VDS = 10 V  
VGS(th)  
VDS(on)  
gfs  
1.0  
2.0  
3.0  
V
V
3.0  
mhos  
180  
200  
20  
Ciss  
pF  
VDS = 28 V  
VDD = 28 V  
VGS = 0 V  
f = 1.0 MHz  
Coss  
Crss  
Gps  
12  
55  
10:1  
14  
65  
---  
dB  
%
---  
IDQ = 2 X 100 mA  
POUT = 200 W  
f = 225 MHz  
η
ψ
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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