MRF18030ALSR3

更新时间： 2024-01-19 17:25:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	508K
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RF Power Field Effect Transistors

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MRF18030ALSR3 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF18030A/D

The RF MOSFET Line

RF Power Field Effect Transistors

MRF18030ALR3

^{N-Channel Enhancement-Mode Lateral MOSFETs}MRF18030ALSR3

Designed for GSM and EDGE base station applications with frequencies

from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. Specified for GSM 1805 - 1880 MHz.

1.8 - 1.88 GHz, 30 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

• Typical GSM Performance:

Power Gain - 14 dB (Typ) @ 30 Watts

Efficiency - 50% (Typ) @ 30 Watts

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power

• Excellent Thermal Stability

CASE 465E-04, STYLE 1

NI-400

MRF18030ALR3

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

CASE 465F-04, STYLE 1

NI-400S

MRF18030ALSR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

83.3

0.48

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

2.1

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Rev. 6

MOTOROLA RF DEVICE DATA

MRF18030ALR3 MRF18030ALSR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7 8

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与MRF18030ALSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF18030AR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN
MRF18030ASR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400S, CASE 465F-04, 2 PIN
MRF18030BLR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18030BLSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18030BR3	FREESCALE	获取价格	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERA
MRF18030BR3	MOTOROLA	获取价格	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERA
MRF18030BSR3	FREESCALE	获取价格	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERA
MRF18030BSR3	MOTOROLA	获取价格	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERA
MRF1803BR3	MOTOROLA	获取价格	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERA
MRF1803BR3	FREESCALE	获取价格	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERA

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