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MRF175GV PDF预览

MRF175GV

更新时间: 2024-11-17 22:40:51
品牌 Logo 应用领域
泰科 - TE 晶体晶体管射频放大器局域网
页数 文件大小 规格书
11页 214K
描述
N-CHANNEL MOS BROADBAND RF POWER FETs

MRF175GV 技术参数

是否Rohs认证: 符合生命周期:Transferred
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:65 V
最大漏极电流 (ID):26 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F4
元件数量:2端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF175GV 数据手册

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Order this document  
SEMICONDUCTOR TECHNICAL DATA  
by MRF175GU/D  
The RF MOSFET Line  
R
F
P
o
w
e
r
M
R
F
1
7
5
G
U
F
i
e
l
d
-
E
f
f
e
c
t
T
r
a
n
s
i
s
t
o
r
s
M
R
F
1
7
5
G
V
N–Channel Enhancement–Mode  
Designed for broadband commercial and military applications using push pull  
circuits at frequencies to 500 MHz. The high power, high gain and broadband  
performance of these devices makes possible solid state transmitters for FM  
broadcast or TV channel frequency bands.  
200/150 WATTS, 28 V, 500 MHz  
N–CHANNEL MOS  
BROADBAND  
Guaranteed Performance  
RF POWER FETs  
MRF175GV @ 28 V, 225 MHz (“V” Suffix)  
Output Power — 200 Watts  
Power Gain — 14 dB Typ  
Efficiency — 65% Typ  
MRF175GU @ 28 V, 400 MHz (“U” Suffix)  
Output Power — 150 Watts  
Power Gain — 12 dB Typ  
Efficiency — 55% Typ  
D
100% Ruggedness Tested At Rated Output Power  
Low Thermal Resistance  
G
G
Low Crss — 20 pF Typ @ VDS = 28 V  
S
(F LA NG E )  
CASE 375–04, STYLE 2  
D
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Drain–Source Voltage  
Drain–Gate Voltage  
V
DSS  
Vdc  
Vdc  
V
DGR  
65  
(R = 1.0 M)  
GS  
Gate–Source Voltage  
V
±40  
Vdc  
Adc  
GS  
Drain Current — Continuous  
I
26  
D
Total Device Dissipation @ T = 25°C  
P
D
400  
Watts  
C
Derate above 25°C  
2.27  
W/°C  
Storage Temperature Range  
Operating Junction Temperature  
THERMAL CHARACTERISTICS  
T
–65 to +150  
200  
°C  
°C  
stg  
T
J
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.44  
°C/W  
θ
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS (1)  
Drain–Source Breakdown Voltage  
(V = 0, I = 50 mA)  
V
65  
Vdc  
mAdc  
(BR)DSS  
GS  
D
Zero Gate Voltage Drain Current  
(V = 28 V, V = 0)  
I
2.5  
1.0  
DSS  
DS  
GS  
Gate–Source Leakage Current  
(V = 20 V, V = 0)  
I
µAdc  
GSS  
GS  
DS  
(continued)  
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 8  
1

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