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MMBT5771D87Z PDF预览

MMBT5771D87Z

更新时间: 2024-09-08 14:43:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
10页 708K
描述
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP

MMBT5771D87Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.77最大集电极电流 (IC):0.2 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:15 V
配置:SINGLEJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBT5771D87Z 数据手册

 浏览型号MMBT5771D87Z的Datasheet PDF文件第2页浏览型号MMBT5771D87Z的Datasheet PDF文件第3页浏览型号MMBT5771D87Z的Datasheet PDF文件第4页浏览型号MMBT5771D87Z的Datasheet PDF文件第5页浏览型号MMBT5771D87Z的Datasheet PDF文件第6页浏览型号MMBT5771D87Z的Datasheet PDF文件第7页 
2N5771  
MMBT5771  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 3R  
E
PNP Switching Transistor  
This device is designed for very high speed saturated switching  
at collector currents to 100 mA. Sourced from Process 65. See  
PN4258 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
15  
15  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.5  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5771  
*MMBT5771  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
225  
1.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
357  
556  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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