Datasheet > MMBT5962

MMBT5962

更新时间： 2024-09-24 22:54:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
2页	45K
描述
NPN General Purpose Amplifier

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MMBT5962 数据手册

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2N5962

MMBT5962

TO-92

SOT-23

Mark: 117

NPN General Purpose Amplifier

This device is designed for use as low noise, high gain, general

purpose amplifiers requiring collector currents to 50 mA.

Sourced from Process 07. See 2N5088 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

8.0

100

Collector Current - Continuous

°C

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5962

*MMBT5962

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

350

2.8

mW/°C

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

357

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

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MMBT5962 替代型号

型号	品牌	替代类型	描述	数据表
MMBT6429LT1G	ONSEMI	功能相似	Amplifier Transistors NPN Silicon
MMBT6429LT1	ONSEMI	功能相似	Amplifier Transistors(NPN Silicon)

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