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MMBT6427 PDF预览

MMBT6427

更新时间: 2024-01-27 18:35:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管达林顿晶体管光电二极管
页数 文件大小 规格书
2页 97K
描述
NPN Darlington Transistor

MMBT6427 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.82
最大集电极电流 (IC):0.5 A配置:Single
最小直流电流增益 (hFE):20000最高工作温度:85 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.225 W
子类别:Other Transistors表面贴装:YES

MMBT6427 数据手册

 浏览型号MMBT6427的Datasheet PDF文件第2页 
Discrete POWER & Signal  
Technologies  
2N6427  
MMBT6427  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 1V  
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely  
high current gain at collector currents to 1.0 A. Sourced from  
Process 05. See MPSA14 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
40  
12  
1.2  
V
V
V
Collector Current - Continuous  
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N6427  
*MMBT6427  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

MMBT6427 替代型号

型号 品牌 替代类型 描述 数据表
MMBT6427 ONSEMI

类似代替

NPN 达林顿晶体管
MMBT6427-7-F DIODES

功能相似

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

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